Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

331

終了ページ:

334

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	7 国際会議録 Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Jacob, C., Pirouz, P., Nishino, S. Trans Tech Publications
2 国際会議録 Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	8 国際会議録 Growth of Columnar SiC on Patterned Si Substrates by CVD Nishino, Shigehiro, Okui, Yoichi, Tai, Yuehai, Jacob, Chacko Materials Research Society
3 国際会議録 Channel Epitaxy of 3C-SiC on Si Substrates by CVD Nishino, S., Okui, Y., Jacob, C., Ohshima, S. Materials Research Society	9 国際会議録 Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane Jacob, C., Hong, M. -H., Chung, J., Pirouz, P., Nishino, S. Trans Tech Publications
4 国際会議録 Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Shoji, A., Okui, Y., Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications	10 国際会議録 Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System Masuda, Y., Ohshima, S., Jacob, C., Nishino, S. Trans Tech Publications
5 国際会議録 Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD Nishino, S., Masuda, Y., Ohshima, S., Jacob, C. Trans Tech Publications	11 国際会議録 Epitaxial Growth of 2 Inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Zhu, Jiliang, Chen, Yi, Mukai, Yusuke, Shoji, Akira, Nishiguchi, Taro, Ohshima, Satoru, Nishino, S. Materials Research Society
6 国際会議録 Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates Nishino, S., Shoji, A., Nishiguchi, T., Ohshima, S. Materials Research Society	12 国際会議録 Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Sugishita, S., Shoji, A., Mukai, Y., Nishiguchi, T., Michikami, K., Issiki, T., Ohshima, S., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12