Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
- 著者名:
Takahashi, T. Ishida, Y. Tsuchida, H. Kamata, I. Okumura, H. Yoshida, S. Arai, K. - 掲載資料名:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 389-393
- 発行年:
- 2002
- 開始ページ:
- 323
- 終了ページ:
- 326
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
7
国際会議録
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
国際会議録
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
Trans Tech Publications |
12
国際会議録
4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
Trans Tech Publications |