Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates

Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

255

終了ページ:

258

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications	7 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society
2 国際会議録 Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001) Negoro, Y., Kimoto, T., Matsunami, H. Materials Research Society	8 国際会議録 Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Chen, Yi, Kimoto, T., Takeuchi, Y., Malhan, R.K., Matsunami, H. Trans Tech Publications
3 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 4H-SiC (1120) Epitaxial Growth Kimoto, T., Yamamoto, T., Chen, Z. Y., Yano, H., Matsunami, H. Trans Tech Publications
4 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications
5 国際会議録 Interface States of SiO2/SiC on (11-20) and (0001) Si Faces Yano, H., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications	12 国際会議録 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Kanzaki, Y., Kinbara, H., Kosugi, H., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12