Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

著者名:

Kimoto, T.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

165

終了ページ:

170

総ページ数:

6

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Recent Achievements and Future Challenges in SiC Homoepitaxial Growth Kimoto, T., Nakazawa, S., Fujihira, K., Hirao, T., Nakamura, S., Chen, Y, Hashimoto, K., Matsunami, H. Trans Tech Publications	7 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society	8 国際会議録 Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces Nakamura, S.I., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications
4 国際会議録 Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Nakamura, S.-i., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Chen, Yi, Kimoto, T., Takeuchi, Y., Malhan, R.K., Matsunami, H. Trans Tech Publications
5 国際会議録 Recent Progress in SiC Epitaxial Growth and Device Processing Technology Kimoto, T., Yano, H., Tamura, S., Miyamoto, N., Fujihira, K., Negoro, Y., Matsunami, H. Trans Tech Publications	11 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition Nakamura, S., Kimoto, T., Matsunami, H. Trans Tech Publications

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