Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

著者名:

Zhou, X.Y.

掲載資料名:

Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany

シリーズ名:

Materials science forum

シリーズ巻号:

363-365

発行年:

2001

開始ページ:

475

終了ページ:

477

総ページ数:

3

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498758 [0878498753]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013318
シリーズID:	PA00000012
会議名:	International Conference on Positron Annihilation : ICPA
回次:	12th
会議開催地:	Munchen, Germany
会議開催年:	2000.08.06-2000.08.12

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