Double Implanted Power MESFET Technology in 4H-SiC

Double Implanted Power MESFET Technology in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

707

終了ページ:

710

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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2 国際会議録 Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor Ortolland, S., Wright, N.G., Johnson, C.M., Knights, A.P., Coleman, P.G., Burrows, C.P., Pidduck, A.J. Trans Tech Publications	8 国際会議録 Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications
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6 国際会議録 4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications	12 国際会議録 TCAD Evaluation of Double Implanted 4H-SiC Power Bi polar Transistors Johnson, C. M., Ortolland, S., Wright, N. G., O'Neill, A. G. Trans Tech Publications

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