Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face

著者名:

Fukuda, K.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

631

終了ページ:

634

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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2 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications	8 国際会議録 Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy Fukuda, K., Suzuki, S., Senzaki, J., Kosugi, R., Tanaka, T., Arai, K. Trans Tech Publications
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