Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC

Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

587

終了ページ:

590

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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2 国際会議録 Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC Gebel, T., Panknin, D., Riehn, R., Parascandola, S., Skorupa, W. Trans Tech Publications	8 国際会議録 Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization Heera, V., Madhusoodanan, K.N., Mucklich, A., Panknin, D., Skorupa, W. Trans Tech Publications
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