Beryllium-Related Defect Centers in 4H-SiC

Beryllium-Related Defect Centers in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

467

終了ページ:

470

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC Frank, T., Weidner, M., Itoh, H., Pensl, G. Trans Tech Publications	7 国際会議録 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications
2 国際会議録 Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation Weidner, M., Pensl, G., Nagasawa, H., Schoner, A., Ohshima, T. Trans Tech Publications	8 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
3 国際会議録 Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient Klettke, O., Pensl, G., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Physics of SiC Processing Pensl, G., Afanas'ev, V. V., Bassler, M., Frank, T., Laube, M., Weidner, M. Trans Tech Publications
4 国際会議録 Transient-Enhanced Diffusion of Boron in SiC Laube, M., Pensl, G. Trans Tech Publications	10 国際会議録 Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy Kawasuso, A., Weidner, M., Redmann, F., Frank, T., Krause-Rehberg, R., Pensl, G., Sperr, P., Triftshauser, W., Itoh, H. Trans Tech Publications
5 国際会議録 Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	11 国際会議録 Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy Kawasuso, A., Weidner, M., Redmann, F., Frank, T., Krause-Rehberg, R., Pensl, G., Sperr, P., Triftshauser, W., Itoh, H. Trans Tech Publications
6 国際会議録 Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiC Pensl, Gerhard, Ciobanu, Florin, Krieger, Michael, Laube, Michael, Reshanov, Sergey, Schmid, Frank, Wagner, Gunter, … Materials Research Society	12 国際会議録 Codoping of 4H-SiC with N- and P-Donors by Ion Implantation Laube, M., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications

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