Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

著者名:

Janson, M.S

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

427

終了ページ:

430

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC Linnarsson,M.K., Janson,M., Schoner,A., Nordell,N., Karlsson,S., Svensson,B.G. Trans Tech Publications	7 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications
2 国際会議録 Aluminum and Boron Diffusion in 4H-SiC Linnarsson, M.K., Janson, M.S., Schoner, A., Svensson, B.G. Materials Research Society	8 国際会議録 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers Linnarsson, M.K., Persson, P.O.A., Bleichner, H., Janson, M., Zimmermann, U., Andersson, H., Karlsson, S., Yakimova, R., … Trans Tech Publications
3 国際会議録 Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC Janson, M., Linnarsson, M. K., Hallen, A., Svensson, B. G. MRS - Materials Research Society	9 国際会議録 Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen Achtziger, N., Hulsen, C., Janson, M. S., Linnarsson, M. K., Svensson, B. G., Witthuhn, W. Trans Tech Publications
4 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications	10 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications
5 国際会議録 Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications	11 国際会議録 Ion Implantation Processing and Related Effects in SiC Svensson, B.G., Hallen, A., Wong-Leung, J., Janson, M.S., Linnarsson, M.K., Kuznetsov, A.Yu., Alfieri, G., Grossner, U., … Trans Tech Publications
6 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications	12 国際会議録 Channeling Measurements of Ion Implantation Damage in 4H-SiC Kuznetsov, A.Yu., Janson, M.S., Hallen, A., Svensson, B.G., Jagadish, C., Gruenleitner, H., Pensl, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12