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Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

著者名:
掲載資料名:
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
シリーズ名:
Materials science forum
シリーズ巻号:
353-356
発行年:
2001
開始ページ:
409
終了ページ:
412
総ページ数:
4
出版情報:
Uetikon-Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498734 [0878498737]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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