Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC

Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC

著者名:

Weingaertner, R.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

397

終了ページ:

400

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	7 国際会議録 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A. Trans Tech Publications
2 国際会議録 Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	8 国際会議録 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation Wellmann, P. J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T. L., Winnacker, A. Trans Tech Publications
3 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	9 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging Wellmann, P. J., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T. L., Winnacker, A. MRS-Materials Research Society
4 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	10 国際会議録 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
5 国際会議録 On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	11 国際会議録 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
6 国際会議録 Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals Bickermann, M., Weingartner, R., Herro, Z., Hofmann, D., Kunecke, U., Wellmann, P.J., Winnacker, A. Trans Tech Publications	12 国際会議録 PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals Rasp, M., Straubinger, T.L., Schmitt, E., Bickermann, M., Reshanov, S., Sadowski, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12