How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

著者名:

Chassagne, T.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

155

終了ページ:

158

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Control of Stress With Growth Conditions and Mechanical Parameters Determination of 3C-SiC Heteroepitaxial Thin Films Gourbeyre, C., Chassagne, T, Berre, M. Le, Ferro, G., Malhaire, C., Monteil, Y., Bardier, D. Materials Research Society	7 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications
2 国際会議録 Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates Chassagne, T., Ferro, G., Haas, H., Leycuras, A., Mank, H., Monteil, Y. Trans Tech Publications	8 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications
3 国際会議録 SiC Thin Film Characterization and Stress Measurements for High-Temperature Sensors Applications Gourbeyre, C., Aboughe-nze, P., Malhaire, C., Berre, M., Monteil, Y., Barbier, D. Materials Research Society	9 国際会議録 On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates G. Ferro, O. Kim-Hak, J. Lorenzzi, N. Jegenyes, M. Marinova Trans Tech Publications
4 国際会議録 Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications	10 国際会議録 Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100)Substrate Ferro,G., Vincent,H., Monteil,Y., Chaussende,D., Bouix,J. Trans Tech Publications
5 国際会議録 How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism M. Soueidan, O. Kim-Hak, G. Ferro, P. Chaudouet, D. Chaussende, B. Nsouli, Y. Monteil Trans Tech Publications	11 国際会議録 Planar Defects, Voids and their Relationship in 3C-SiC Layers Mendez, D., Aouni, A., Araujo, D., Ferro, G., Monteil, Y., Bustarret, E. Trans Tech Publications
6 国際会議録 Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) Ferro, G., Camassel, J., Juillaguet, S., Balloud, C., Polychroniadis, E.K., Stoimenos, Y., Seigle-Ferrand, P., Dazord, … Trans Tech Publications	12 国際会議録 Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12