In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

著者名:

Loo, R.

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5133

発行年:

2003

開始ページ:

329

終了ページ:

338

総ページ数:

10

出版情報:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449993 [0819449997]

言語:

英語

請求記号:

P63600/5133

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013121
シリーズID:	PA00000029
会議名:	ALTECH 2003 : Analytical Techniques for Semiconductor Materials and Process Characterization IV ; Meeting of the Electrochemical Society : Diagnostic Techniques for Semiconductor Materials and Devices VI
回次:	2003 : 4th ; 202nd : 6th
会議開催地:	Paris, France ; Salt Lake City, UT, USA
会議開催年:	2003.04.00 ; 2002.10.00

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