Recent Developments in Nuclear Methods in Support of Semiconductor Characterization

Recent Developments in Nuclear Methods in Support of Semiconductor Characterization

著者名:

Brijs, B.

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5133

発行年:

2003

開始ページ:

50

終了ページ:

62

総ページ数:

13

出版情報:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449993 [0819449997]

言語:

英語

請求記号:

P63600/5133

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013121
シリーズID:	PA00000029
会議名:	ALTECH 2003 : Analytical Techniques for Semiconductor Materials and Process Characterization IV ; Meeting of the Electrochemical Society : Diagnostic Techniques for Semiconductor Materials and Devices VI
回次:	2003 : 4th ; 202nd : 6th
会議開催地:	Paris, France ; Salt Lake City, UT, USA
会議開催年:	2003.04.00 ; 2002.10.00

類似資料:

1 国際会議録 Recent Developments in Nuclear Methods in Support of Semiconductor Characterization Brijs, B., Bender, H., Huyghebaert, C., Janssens, T., Vandervorsi, W., Nakajima, K., Kimura, K., Bergmaier, A., … Electrochemical Society	7 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society
2 国際会議録 Physical Characterization of Thin HfO2 Layers by the Combined Analysis with Complementary Techniques Bender, H., Conard, T., Richard, O., Brijs, B., Petry, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, … SPIE-The International Society for Optical Engineering	8 国際会議録 Characterization of AlxGa1-xN Films Prepared by Plasma-Induced Molecular-Beam Epitaxy on c-Plane Sapphire Angerer, H., Ambacher, O., Stutzmann, M., Metzger, T., Hopler, R., Born, E., Bergmaier, A., Dollinger, G. MRS - Materials Research Society
3 国際会議録 Physical Characterization of Thin HfO2 Layers by the Combined Analysis with Complementary Techniques Bender, H., Brijs, B., Peby, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, C., Mack, P., … Electrochemical Society	9 国際会議録 Nitrogen Profile and Electrical Properties of Reoxidized Thermally Grown Silicon Nitride Ludsteck, A,, Schulze, J., Eisele, I., Dietl, W., Chung, H., Nenyei, Z., Bergmaier, A., Dollinger, G. Electrochemical Society
4 国際会議録 Characterization of Ultra Thin Layers by Rutherford Backscattering Spectrometry Brijs,B., Deleu,J., Connard,T., Li,H., Loo,R., Caymax,M., Nakajima,K., Kimura,K., Vandervorst,W. SPIE - The International Society for Optical Engineering	10 国際会議録 Physcial Characterization of Ultrathin High-k Dielectrics Vandervorst, W., Brijs, B., Bender, H., Conard, O.T., Petry, J., Richard, O., Elshocht, S.Van, Delabie, A., Caymax, M., … Materials Research Society
5 国際会議録 Profile changes and self-sputtering during low-energy ion implantation Vandervorst, W., Janssens, T., Brijs, B., Lindsay, R., Collart, E.J.H., Kirkwood, David A., Mathot, G., Terwagne, G. Materials Research Society	11 国際会議録 EVALUATION OF GaAs REGROWTH ON A NOVEL GaAs/SiO2 COMPOSITE SURFACE ON SILICON De Boeck, J., Alay, J., vanhellemont, J., Brijs, B., Vandervorst, W., Borghs, G., Blondeel, M., Vinkier, C. Materials Research Society
6 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	12 国際会議録 Ion implantation in Ge and associated defect control (invited paper) Satta, A., Simoen, E., Janssens, T., Benedetti, A., Clarysse, T., De Jaeger, B., Geenen, L., Brijs, B., Meuris, M., … Electrochemical Society

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