Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors
- 著者名:
- Xiong, H.D. ( Vanderbilt Univ. (USA) )
- Fleetwood, D.M. ( Vanderbilt Univ. (USA) )
- Schwank, J.R. ( Sandia National Labs. (USA) )
- 掲載資料名:
- Noise in Devices and Circuits
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5113
- 発行年:
- 2003
- 開始ページ:
- 44
- 終了ページ:
- 55
- 総ページ数:
- 12
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819449733 [0819449733]
- 言語:
- 英語
- 請求記号:
- P63600/5113
- 資料種別:
- 国際会議録
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SPIE - The International Society of Optical Engineering |
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11
国際会議録
Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
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