Wavefront aberration measurement in 157-nm high numerical aperture lens
- 著者名:
Kim, J.-H. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Suganaga, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Watanabe, K. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Kanda, N. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Itani, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Cashmore, J.S. ( Exitech Ltd. (United Kingdom) ) Gower, M.C. ( Exitech Ltd. (United Kingdom) ) - 掲載資料名:
- Optical Microlithography XVI
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5040
- 発行年:
- 2003
- 巻:
- Part Three
- 開始ページ:
- 1408
- 終了ページ:
- 1419
- 総ページ数:
- 12
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819448453 [0819448451]
- 言語:
- 英語
- 請求記号:
- P63600/5040
- 資料種別:
- 国際会議録
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3
国際会議録
Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lens
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Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography
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