Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography

Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography

著者名:

Tan, S.-K. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Lin, Q. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Hsia, L.C. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Sun, S.-C. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )

掲載資料名:

Optical Microlithography XVI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5040

発行年:

2003

巻:

Part Two

開始ページ:

1125

終了ページ:

1136

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448453 [0819448451]

言語:

英語

請求記号:

P63600/5040

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013030
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	2003 : 16th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2003.02.25-2003.02.28

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2 国際会議録 Alternating PSM for sub-60-nm DRAM gate single exposure [6349-66] Chen, K., Lu, R., Fu, K. K., Hsia, C., Shih, C.-L., Lin, J. SPIE - The International Society of Optical Engineering	8 国際会議録 (Sub-) 100-nm gate patterning using 248-nm alternating PSM Vandenberghe,G.N., Jaenen,P., Jonckheere,R.M., Ronse,K., Toublan,O. SPIE-The International Society for Optical Engineering
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4 国際会議録 Alternating PSM defect printability at 193-nm wavelength Lin,C.-C., Kim,Y.-S., Kimmel,K.R. SPIE-The International Society for Optical Engineering	10 国際会議録 A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography M. L. Ling, G. S. Chua, C. J. Tay, C. Quan, Q. Lin SPIE - The International Society of Optical Engineering
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