Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures
- 著者名:
Kagan, M.S. ( Institute of Radio Engineering and Electronics (Russia) ) Altukhov, I.V. ( Institute of Radio Engineering and Electronics (Russia) ) Chirkova, E.G. ( Institute of Radio Engineering and Electronics (Russia) ) Korolev, K.A. ( Institute of Radio Engineering and Electronics (Russia) ) Sinis, V.P. ( Institute of Radio Engineering and Electronics (Russia) ) Troeger, R.T. ( Univ. of Delaware (USA) ) Ray, S.K. ( Univ. of Delaware (USA) ) Kolodzey, J. ( Univ. of Delaware (USA) ) - 掲載資料名:
- 10th International Symposium on Nanostructures: Physics and Technology
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5023
- 発行年:
- 2003
- 開始ページ:
- 401
- 終了ページ:
- 404
- 総ページ数:
- 4
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819448248 [0819448249]
- 言語:
- 英語
- 請求記号:
- P63600/5023
- 資料種別:
- 国際会議録
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10
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Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures
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