Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

著者名:

Adam, T.N. ( Univ. of Delaware (USA) )
Troeger, R.T. ( Univ. of Delaware (USA) )
Ray, S.K. ( Univ. of Delaware (USA) )
Lehmann, U. ( Univ. of Delaware (USA) )
Kolodzey, J. ( Univ. of Delaware (USA) )

掲載資料名:

10th International Symposium on Nanostructures: Physics and Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5023

発行年:

2003

開始ページ:

398

終了ページ:

400

総ページ数:

3

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448248 [0819448249]

言語:

英語

請求記号:

P63600/5023

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013007
シリーズID:	PA00000029
会議名:	International Symposium on Nanostructures: Physics and Technology
回次:	2002 : 10th
会議開催地:	St. Petersburg, Russia
会議開催年:	2002.06.17-2002.06.21

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2 国際会議録 Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures Kagan, M.S., Altukhov, I.V., Chirkova, E.G., Korolev, K.A., Sinis, V.P., Troeger, R.T., Ray, S.K., Kolodzey, J. SPIE-The International Society for Optical Engineering	8 国際会議録 SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology J.R. Holt, E.C. Harley, T.N. Adam, S. Jeng, K. Tabakman Electrochemical Society
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