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Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer

著者名:
Vdovin, E.E. ( Institute of Microelectronics Technology (Russia) )
Khanin, Yu.N. ( Institute of Microelectronics Technology (Russia) )
Dubrovskii, Yu.V. ( Institute of Microelectronics Technology (Russia) )
Eaves, L. ( Univ. of Nottingham (United Kingdom) )
Main, P.C. ( Univ. of Nottingham (United Kingdom) )
Henini, M. ( Univ. of Nottingham (United Kingdom) )
Hill, G. ( Univ. of Sheffield (United Kingdom) )
さらに 2 件
掲載資料名:
10th International Symposium on Nanostructures: Physics and Technology
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5023
発行年:
2003
開始ページ:
231
終了ページ:
234
総ページ数:
4
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
言語:
英語
請求記号:
P63600/5023
資料種別:
国際会議録

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