Improved beam quality due to current profiling in a broad-area semiconductor laser

Improved beam quality due to current profiling in a broad-area semiconductor laser

著者名:

Houlihan, J.A. ( National Univ. of Ireland/Cork (Ireland) )

Voignier, V. ( National Univ. of Ireland/Cork (Ireland) )

O'Callaghan, J.R. ( National Univ. of Ireland/Cork (Ireland) )

Wu, G. ( National Univ. of Ireland/Cork (Ireland) )

Huyet, G. ( National Univ. of Ireland/Cork (Ireland) )

McInerney, J.G. ( Novalux, Inc. (USA) )

Corbett, B. ( National Microelectronics Research Ctr. (Ireland) )

さらに 2 件

掲載資料名:

Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4947

発行年:

2003

開始ページ:

261

終了ページ:

269

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819447425 [0819447420]

言語:

英語

請求記号:

P63600/4947

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012931
シリーズID:	PA00000029
会議名:	Photonics Fabrication Europe : Laser Diodes, Optoelectronic Devices, and Heterogenous Integration
回次:	2002
会議開催地:	Brugge, Belgium
会議開催年:	2002.10.29-2002.10.31

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