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X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure

著者名:
Bak-Misiuk, J.  
掲載資料名:
Frontiers of high pressure research II: application of high pressure to low-dimensional novel electronic materials
シリーズ名:
NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号:
48
発行年:
2001
開始ページ:
263
終了ページ:
274
総ページ数:
12
出版情報:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402001598 [1402001592]
言語:
英語
請求記号:
N17050/48
資料種別:
国際会議録

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