Light-current characteristics of 1.55-μm InGaAsP/InP MQW-LD with highly d-doped InGaAsP/InP layer
- 著者名:
- Han, I.K. ( Korea Institute of Science and Technology )
- Heo, D.C.
- Choi, W.J.
- Lee, J.I.
- 掲載資料名:
- Materials and devices for optical and wireless communications : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 15-18 October, 2002, Shanghai, China
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4905
- 発行年:
- 2002
- 開始ページ:
- 527
- 終了ページ:
- 532
- 総ページ数:
- 6
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819446947 [0819446947]
- 言語:
- 英語
- 請求記号:
- P63600/4905
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
Materials Research Society |
2
国際会議録
Design of 1.55-ヲフm fully depleted InGaAsP/InP optical thyristors for optical communication systems
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |