Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node
- 著者名:
Dieu, L. ( DuPont Photomasks, Inc. (USA) ) Fanucchi, E.L. Hughes, G.P. Maltabes, J.G. ( Motorola, Inc. (USA) ) Mellenthin, D.L. ( DuPont Photomasks, Inc. (USA) ) Conley, W. ( Motorola, Inc. (USA) ) Litt, L.C. Lucas, K. Socha, R.J. ( ASML (USA) ) Wampler, K.E. Verhappen, A. Kiuten, J. - 掲載資料名:
- 22nd Annual BACUS Symposium on Photomask Technology
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4889
- 発行年:
- 2002
- 巻:
- Part Two
- 開始ページ:
- 1227
- 終了ページ:
- 1233
- 総ページ数:
- 7
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819446756 [0819446750]
- 言語:
- 英語
- 請求記号:
- P63600/4889
- 資料種別:
- 国際会議録
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SPIE-The International Society for Optical Engineering |
7
国際会議録
Process, design, and optical proximity correction requirements for the 65-nm device generation
SPIE-The International Society for Optical Engineering |
2
国際会議録
Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100- nm node
SPIE-The International Society for Optical Engineering |
8
国際会議録
Process, design and optical proximity correction requirements for the 65nm device generation
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
5
国際会議録
Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |