Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures
- 著者名:
- Sewell, R. ( Univ. of Western Australia (Australia) )
- Dell, J.M.
- Musca, C.A.
- Faraone, L.
- 掲載資料名:
- Materials for infrared detectors II : 8-9 July 2002 ,Seattle, Washington, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4795
- 発行年:
- 2002
- 開始ページ:
- 62
- 終了ページ:
- 69
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445629 [0819445622]
- 言語:
- 英語
- 請求記号:
- P63600/4795
- 資料種別:
- 国際会議録
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Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization
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RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability
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