Modeling and circuit simulation of GaN-based light-emitting diodes for optimum efficiency through uniform current spreading
- 著者名:
Ebong, A. ( GE Global Research Ctr. (USA) ) Arthur, S. Downey, A.E. Stokes, E.B. Caos, X.A. LeBoeuf, S.E. Sandvik, P.M. Walker, D. - 掲載資料名:
- Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4776
- 発行年:
- 2002
- 開始ページ:
- 187
- 終了ページ:
- 194
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445438 [0819445436]
- 言語:
- 英語
- 請求記号:
- P63600/4776
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
2
国際会議録
Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes
Materials Research Society |
8
国際会議録
Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD [5941-28]
SPIE - The International Society of Optical Engineering |
3
国際会議録
Simplified electro-optical model for device and circuit simulation of light emitting diodes (LEDs)
SPIE - The International Society of Optical Engineering |
Materials Research Society |
Electrochemical Society |
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |