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Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

著者名:
Cao, X.A. ( GE Global Research Ctr. (USA) )
Topol, K. ( Univ. at Albany (USA) )
Shahedipour-Sandvik, F.
Teetsov, J. ( GE Global Research Ctr. (USA) )
Sandvik, P.M.
LeBoeuf, S.E.
Ebong, A.
Kretchmer, J.W.
Stokes, E.B.
Arthur, S.
Kaloyeros, A.E. ( Univ. at Albany (USA) )
Walker, D. ( GE Global Research Ctr. (USA) )
さらに 7 件
掲載資料名:
Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4776
発行年:
2002
開始ページ:
105
終了ページ:
113
総ページ数:
9
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819445438 [0819445436]
言語:
英語
請求記号:
P63600/4776
資料種別:
国際会議録

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