Growth of homoepitaxial GaN layers and GaN/AIGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy

Growth of homoepitaxial GaN layers and GaN/AIGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy

著者名:

Kubo, S. ( Yamaguchi Univ. (Japan) )

Kainosho, K. ( Japan Energy Corp. (Japan) )

Yokohata, A.

さらに 4 件

掲載資料名:

Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4776

発行年:

2002

開始ページ:

97

終了ページ:

104

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445438 [0819445436]

言語:

英語

請求記号:

P63600/4776

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012613
シリーズID:	PA00000029
会議名:	Optics & Photonics : Modeling and characterization of light sources
回次:	2002 : 2nd
会議開催地:	Seattle, WA, USA
会議開催年:	2002.07.09-2002.07.11

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