Defect printability for 100-nm design rule using 193-nm lithography

Defect printability for 100-nm design rule using 193-nm lithography

著者名:

Philipsen, V. ( IMEC (Belgium) )
Jonckheere, R.M.
Kohlpoth, S. ( Infineon Technologies AG (Germany) )
Torres, A. ( ASML Masktools (USA) )

掲載資料名:

Photomask and Next-Generation Lithography Mask Technology IX

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4754

発行年:

2002

開始ページ:

640

終了ページ:

651

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445179 [0819445177]

言語:

英語

請求記号:

P63600/4754

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012591
シリーズID:	PA00000029
会議名:	Photomask and next-generation lithography mask technology
回次:	2002 : 9th
会議開催地:	Yokohama, Japan
会議開催年:	2002.04.23-2002.04.25

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2 国際会議録 Printability of hard and soft defects in 193-nm lithography Philipsen, V., Jonckheere, R.M., Kohlpoth S., Friedrich, C.M., Torres, J.A. SPIE-The International Society for Optical Engineering	8 国際会議録 Model-based OPC for first-generation 193-nm lithography Lucas,K.D., Word,J.C., Vandenberghe,G.N., Verhaegen,S., Jonckheere,R.M. SPIE-The International Society for Optical Engineering
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