Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/AI2O3 heterostructure lasers

Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/AI2O3 heterostructure lasers

著者名:

Yablonskii, G.P. ( B.I. Stepanov Institute of Physics (Belarus) )

Alam, A. ( AIXTRON AG (Germany) )

掲載資料名:

ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4748

発行年:

2002

開始ページ:

449

終了ページ:

454

総ページ数:

6

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445117 [0819445118]

言語:

英語

請求記号:

P63600/4748

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012584
シリーズID:	PA00000029
会議名:	ICONO
回次:	2001
会議開催地:	Minsk, Belarus
会議開催年:	2001.06.26-2001.07.01

類似資料:

1 国際会議録 InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K Schineller, B., Protzmann, H., Luenenbuerger, M., Gerstenbrandt, G., Heuken, M., Lutsenko, E.V., Zubialevich, V.Z., … SPIE-The International Society for Optical Engineering	7 国際会議録 Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE Gurskii,A.L., Gavrilenko,A.N., Lutsenko,E.V., Yablonskii,G.P., Taudt,W., Wachtendorf,B., Sollner,J., Schmoranzer,J., … Trans Tech Publications
2 国際会議録 Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures Lutsenko, E.V., Zubialevich, V.Z., Pavlovskii, V.N., Marko, I.P., Gurskii, A.L., Yablonskii, G.P., Kalisch, H., Walther, … SPIE-The International Society for Optical Engineering	8 国際会議録 Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors Bremser,M.D., Luenenbuerger,M., Protzmann,H., Heuken,M. SPIE - The International Society for Optical Engineering
3 国際会議録 ZnMgSSe/ZnSe separate confinement heterostructure multiple quantum well lasers Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Kalisch, H., Jansen, R.H., Heime, … SPIE-The International Society for Optical Engineering	9 国際会議録 GaN Production Transfer From Single Wafer Equipment to Planetary Reactors Schineller, B., Schoen, O., Protzmann, H., Luenenbuerger, M, Alam, A., Ileuken, M., Juergensen, H. Electrochemical Society
4 国際会議録 Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures YABLONSKII, G. P., GURSKII, A. L., LUTSENKO, E. V., ZUBIALEVICH, V. Z., PAVLOVSKII, V. N., ANUFRYK, A. S., DIKME, Y., … Kluwer Academic Publishers	10 国際会議録 Electron Beam Pumped Room-Temperature Lasing of MOVPE-Grown ZnSe Gurskii,A.L., Gruzinskii,V.V., Gavrilenko,A.N., Kulak,I.I., Mitskovets,A.I., Yablonskii,G.P., Scholl,M., Heuken,M. Trans Tech Publications
5 国際会議録 Stimulated Emission and Gain in GaN Epilayers Grown on Si GURSKII, A. L., LUTSENKO, E. V., ZUBIALEVICH, V. Z., PAVLOVSKII, V. N., YABLONSKII, G. P., KAZLAUSKAS, K., TAMULAITIS, … Kluwer Academic Publishers	11 国際会議録 Silicon as a substrate in multiwafer MOVPE GaN technology Alam,A., Schineller,B., Protzmann,H., Lunenburger,M., Heuken,M., Bremser,M.D., Woelk,E., Dadgar,A., Krost,A. SPIE-The International Society for Optical Engineering
6 国際会議録 Investigation of GaN on Si(111) for optoelectronic applications Dikme, Y., Szymakowski, A., Kalisch, H., Lutsenko, E.V, Zubialevich, V.N., Yablonskii, G.P., Chern, H.M., Schaefer, C., … SPIE-The International Society for Optical Engineering	12 国際会議録 MOVPE of m-plane InGaN/GaN Buffer and LED Structures on γ-LiAlO2 H. Behmenburg, C. Mauder, L. Rahimzadeh Khoshroo, T.C. Wen, Y. Dikme, M.V. Rzheutskii, E.V. Lutsenko, G.P. Yablonskii, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12