Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

著者名:

掲載資料名:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4746

発行年:

2002

巻:

VOL-1

開始ページ:

608

終了ページ:

615

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

言語:

英語

請求記号:

P63600/4746

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012582
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	2001 : 11th
会議開催地:	Delhi, India
会議開催年:	2001.12.11-2001.12.15

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