Highly manufacturable capacitor-less 1T-DRAM concept(Invited Paper)

Highly manufacturable capacitor-less 1T-DRAM concept(Invited Paper)

著者名:

Fazan, P.C. ( Swiss Federal Institute of Technology Lausanne and Innovative Silicon Solutions (Switzerland) )
Okhonin, S. ( Swiss Federal Institute of Technology Lausanne )
Nagoga, M.
Sallese, J.M.

掲載資料名:

Design, process integration, and characterization for microelectronics : 6-7 March 2002, Santa Clara, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4692

発行年:

2002

開始ページ:

489

終了ページ:

502

総ページ数:

14

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444394 [0819444391]

言語:

英語

請求記号:

P63600/4692

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012527
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Design, process integration, and characterization for microelectronics
回次:	2002
会議開催地:	Santa Clara, CA, USA
会議開催年:	2002.03.06-2002.03.07

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