New methods to calibrate simulation parameters for chemically amplified resists

New methods to calibrate simulation parameters for chemically amplified resists

著者名:

Tollkuehn, B. ( Fraunhofer-Institut fuer Integrierte Schaltungen (Germany) )

Erdmann, A.

Kivel, N. ( Fraunhofer-Institut fuer Integrierte Schaltungen (Germany) )

Robertson, S.A. ( Shipley Co. L.L.C. (USA) )

Kang, D.

Hansen, S.G. ( ASML (USA) )

Fumar-Pici, A.

Chiou, T.-B.

Hoppe, W. ( SIGMA-C GmbH (Germany) )

さらに 4 件

掲載資料名:

Optical Microlithography XV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4691

発行年:

2002

巻:

Part Two

開始ページ:

1168

終了ページ:

1179

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444370 [0819444375]

言語:

英語

請求記号:

P63600/4691

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012526
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	2002 : 15th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2002.03.05-2002.03.08

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2 国際会議録 Comparison of simulation approaches for chemically amplified resists Erdmann,A., Henke,W., Robertson,S.A., Richter,E., Tollkuhn,B., Hoppe,W. SPIE-The International Society for Optical Engineering	8 国際会議録 Will Darwin's law help us to improve our resist models? Tollkuehn, B., Fuehner, T., Matiut, D., Erdmann, A., Semmler, A., Kuechler, B., Kokai, G. SPIE-The International Society for Optical Engineering
3 国際会議録 New models for the simulation of post-exposure bake of chemically amplifed resists Matiut, D., Erdmann, A., Tollkuehn, B., Semmler, A. SPIE-The International Society for Optical Engineering	9 国際会議録 Novel single-layer chemically amplified resist for 193-nm lithography Choi,S.-J., Kang,Y., Jung,D.-W., Park,C.-G., Moon,J.-T. SPIE-The International Society for Optical Engineering
4 国際会議録 Improved notch moedl for resist dissolution in lithography simulation Robertson,S.A., Pavelchek,E.K., Hoppe,W., Wildfeuer,R. SPIE-The International Society for Optical Engineering	10 国際会議録 Diffusion parameter analysis for chemical amplification resists as a function of resist process Kim, M.-S., Paek, S.-W., Kwak, D.-S., Kim, H.-J., Lee, C.-S., Gil, M.-G., Song, Y.-W. SPIE-The International Society for Optical Engineering
5 国際会議録 Method for choosing "generic" photoresist simulation parameters Hansen,S.G. SPIE - The International Society for Optical Engineering	11 国際会議録 Characterizing acid mobility in chemically amplified resists via spectroscopic methods Jessop, J. L. P., Goldie, S. N., Scranton, A. B., Blanchard, G. J., Rangarajan, B., Capodieci, L., Subramanian, R., … SPIE - The International Society of Optical Engineering
6 国際会議録 Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists Kang, D., Robertson, S.A. SPIE-The International Society for Optical Engineering	12 国際会議録 Mask and source optimization for lithographic imaging systems Erdmann, A., Farkas, R., Fuehner, T., Tollkuehn, B., Kokai, G. SPIE - The International Society of Optical Engineering

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