Development and characterization of 193-nm ultra-thin resist process

Development and characterization of 193-nm ultra-thin resist process

著者名:

Amblard, G.R. ( Advanced Micro Devices, Inc. (USA) )
Peters, R. ( Motorola (USA) )
Cobb, J.L.
Edamatsu, K. ( Sumitomo Chemical Co., Ltd. (Japan) )

掲載資料名:

Advances in Resist Technology and Processing XIX

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4690

発行年:

2002

巻:

Part One

開始ページ:

287

終了ページ:

298

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444363 [0819444367]

言語:

英語

請求記号:

P63600/4690

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012523
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	2002 : 19th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2002.03.04-2002.03.06

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2 国際会議録 Fabrication of integrated circuits with high yield using ultra-thin resist processes Peters, R.D., Postnikov, S.V., Cobb, J.L., Dakshina-Murthy, S., Stephens, T., Parker, C., Luckowski, E., Martinez, A.M. … SPIE-The International Society for Optical Engineering	8 国際会議録 0.18-ｦﾌm technology at contact level:deep-UV process development by tuning NA/o and using a bottom antireflective coating Amblard,G.R., Chollet,J.P. SPIE - The International Society for Optical Engineering
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