Origin of improved luminescence efficiency after annealing of Ga(In)Nas materials grown by molecular beam epitaxy
- 著者名:
- Li, W. ( Tampere Univ .of Technology (Finland) )
- Pessa, M.
- Ahlgren, T. ( Univ. of Helsinki (finland) )
- Dekker, J. ( Helsinki Univ. of Technology (Finland) )
- 掲載資料名:
- Photodetector materials and devices VII : 21-23 January 2002, San Jose, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4650
- 発行年:
- 2002
- 開始ページ:
- 207
- 終了ページ:
- 212
- 総ページ数:
- 6
- 出版情報:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819443892 [0819443891]
- 言語:
- 英語
- 請求記号:
- P63600/4650
- 資料種別:
- 国際会議録
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