Structual analysis of a new phase change optical memory material: Ag-Sb-Te

Structual analysis of a new phase change optical memory material: Ag-Sb-Te

著者名:

Sharma, Y.D. ( Univ. of Delhi/South Campus (India) )
Bhatnagar, P.K.

掲載資料名:

Semiconductor Optoelectronic Device Manufacturing and Applications

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4602

発行年:

2001

開始ページ:

225

終了ページ:

233

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443410 [0819443417]

言語:

英語

請求記号:

P63600/4602

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012430
シリーズID:	PA00000029
会議名:	Semiconductor optoelectronic device manufacturing and applications
回次:	2001
会議開催地:	Nanjing, China
会議開催年:	2001.11.07-2001.11.09

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3 国際会議録 New chalcogenide alloy as phase-change optical recording material Sharma,Y.D., Singh,L., Bhatnagar,P.K. SPIE-The International Society for Optical Engineering	9 国際会議録 Theoretical Model for Estimating Surface Recombination Velocity of Polycrystalline CIGS Solar Cells Singh, Lakshman, Pandey, P.K., Sharma, Y.D., Bhatnagar, Chhavi, Bhatnagar, P.K. SPIE-The International Society for Optical Engineering
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