Technology and properties of GaAlAsSb layers grown on GaSb substrates

Technology and properties of GaAlAsSb layers grown on GaSb substrates

著者名:

Piskorski,M. ( Institute of Electron Technology )

掲載資料名:

International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4413

発行年:

2000

開始ページ:

76

終了ページ:

81

総ページ数:

6

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441164 [0819441163]

言語:

英語

請求記号:

P63600/4413

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012128
シリーズID:	PA00000029
会議名:	International Conference on Solid State Crystals
回次:	2000
会議開催地:	Zakopane, Poland
会議開催年:	2000.10.09-2000.10.13

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