Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

著者名:

Antonova,J.V. ( Institute of Semiconductor Physics )

掲載資料名:

International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4412

発行年:

2000

開始ページ:

120

終了ページ:

125

総ページ数:

6

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441157 [0819441155]

言語:

英語

請求記号:

P63600/4412

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012127
シリーズID:	PA00000029
会議名:	International Conference on Solid State Crystals
回次:	2000 : 2nd
会議開催地:	Zakopane, Poland
会議開催年:	2000.10.09-2000.10.13

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1 国際会議録 Defects and their electronic properties in high-pressure-annealed SOI structures sliced by hydrogen Popov, V.P., Gutakovskii, A.K., Safronov, L.N., Tyschenko, I.E., Zhuravlev, S.K., Talochkin, A.B., Antonova, A.I., … Kluwer Academic Publishers	7 国際会議録 Effect of stress exerted by Si3N4 and SiO2 insulation layers on donor generation in surface layer of Czochralski-grown silicon Jung,W., Misiuk,A., Bak-Misiuk,J., Rozental,M. SPIE - The International Society for Optical Engineering
2 国際会議録 Effect of Annealing at Argon Pressures up to 1.2 Gpa on Hydrogen-Plasma Etched and Hydrogen Implanted Single-Crystalline Silicon Misiuk, A., Misiuk, J.B.K., Barcz, A., Romano-Rodriguez, A., Antonova, I.V., Popov, V.P., Londos, C.A., Jun, J. Kluwer Academic Publishers	8 国際会議録 Modification of Si/SiO2 interface in SOI structures by hydrogen implantation: radiation tolerance Antonova, I.V. Electrochemical Society
3 国際会議録 FTIR Spectroscopy And Spectroscopic Ellipsometry Study Of Nanocrystalline Layers Formed By High-Dose Hydrogen And Deuterium Implantation Of Silicon Antonova, I. V., Gromov, V. T., Gutakovskii, A. K., Obodnikov, V. I., Popov, V. P., Safronov, L. N., Stepovik, A. P., … Materials Research Society	9 国際会議録 Gettering of Cu in silicon by silicon nitride precipitates Popov, V.P., Tyschenko, I.E., Kachurin, G.A., Janovskaja, S.G., Obodnikov, V.I. Electrochemical Society
4 国際会議録 Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon co-Implanted with Hydrogen and Helium Misiuk, A., Ratajczak, J., Barcz, A., Bak-Misiuk, J., Shalimov, A., Surma, B., Wnuk, A., Jagielski, J., Antonova, I. V. Kluwer Academic Publishers	10 国際会議録 Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen Misiuk, A., Katcki, J., Ratajczak, J., Raineri, V., Bak-Misiuk, J., Gawlik, L., Bryja, L., Jun, J. Kluwer Academic Publishers
5 国際会議録 Non-Crucial Role of the Defects in the splitting for Hydrogen Implanted Silicon With High Boron Concentration Popov, V. P., Stas, V. F., Antonova, I. V. MRS - Materials Research Society	11 国際会議録 Formation and evolution of the oxygen precipitates in CZ-Si upon high pressure- high temperature treatment Antonova, I.V., Misiuk, A., Popov, V.P., Plotnikov, A.E., Surma, B. Electrochemical Society
6 国際会議録 Electrical characteristics of SOI-like structures formed in nitrogen or oxygen implanted silicon treated under high pressure Antonova, I.V., Misiuk, A., Londos, C.A. Electrochemical Society	12 国際会議録 Effect of silicon microstructure on stress-stimulated creation of thermal donors Misiuk,A. SPIE-The International Society for Optical Engineering

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