Blank Cover Image

Process-induced threshold voltage fluctuations on SOI fully depleted technology

著者名:
掲載資料名:
In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II : 31 May-1 June 2001, Edinburgh, UK
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4406
発行年:
2001
開始ページ:
171
終了ページ:
179
総ページ数:
9
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819441072 [0819441074]
言語:
英語
請求記号:
P63600/4406
資料種別:
国際会議録

類似資料:

1 国際会議録 Fully depleted SOI process and device technology for digital and RF application

Ichikawa, F., Nagatomo, Y., Katakura, Y., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S.

Electrochemical Society
7 国際会議録 Analytical Modelling of Threshold Voltage and Drain Current in Short Channel Fully Depleted Cylindrical Gate MOSFET

Gupta,P.S., Kranti,Abhinav, Haldar,S.

SPIE - The International Society for Optical Engineering
2 国際会議録 Fully Depleted SOI Process and Device Technology for Digital and RF Applications*

Ichikawa, F., Nagatomo, V., Katakura, V., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S.

Electrochemical Society
8 国際会議録 Observation of Bulk-Trap Induced Generation-Recombination Noise in the Fully Depleted SOI MOSFET

Lun, Z., Ang, D.S., Ling, C.H.

Electrochemical Society
3 国際会議録 Partially Depleted SOI Dynamic Threshold MOSFET for Low-Voltage and Microwave Applications

Dehan, M., Vanhoenacker-Janvier, D., Raskin, J.-P.

Electrochemical Society
9 国際会議録 Cryogenic Operation of Fully-Depleted SOI nFETs

Li, Y., Cressler, J.D., Niu, G., Patel, J.

Electrochemical Society
4 国際会議録 Fully Depleted SIMOX SOI Process Technology for Low Power Digital and RF Device

Itoh, M., Kawai, Y., Ito, S., Yokomizo, K., Katakura, Y., Fukuda, Y., Ichikawa, F.

Electrochemical Society
10 国際会議録 A Fully Depleted Delta-Channel SOI NMOSFET

Jiao, Z., Salama, C.A.T.

Electrochemical Society
5 国際会議録 Temperature dependence of drain-induced barrier lowering in fully depleted SOI MOSFETs

Jomaah, J, Ghibaudo, G, Pelloie, J L, Balestra, F

Electrochemical Society
11 国際会議録 Physical and electrical properties of fully-depleted SOI devices

Pelloie, J.L., Sun, Y.S.

Electrochemical Society
6 国際会議録 Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
12 国際会議録 Stability and reliability of fully depleted SOI MOSFETs

Tsuchiya,T.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12