Optical proximity correction of critical layers in DRAM process of 0.12-μm minimum feature size

Optical proximity correction of critical layers in DRAM process of 0.12-μm minimum feature size

著者名:

Oh,Y.-H. ( Wonkwang Univ. )
Lee,J.-C.
Park,K.-C.
Go,C.S.
Lim,S.

掲載資料名:

Optical Microlithography XIV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4346

発行年:

2001

巻:

4346

パート:

Two of Two Parts

開始ページ:

1567

終了ページ:

1574

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440327 [0819440329]

言語:

英語

請求記号:

P63600/4346

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012062
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	2001 : 14th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2001.02.27-2001.03.02

類似資料:

1 国際会議録 Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-ｦﾌm mask pattern Oh,Y.-H., Lee,J.-C., Lim,S. SPIE - The International Society for Optical Engineering	7 国際会議録 Hierarchical processing for accurate optical proximity correction for 1-Gb DRAM metal layers Kobayashi,S., Uno,T., Yamamoto,K., Tanaka,S., Kotani,T., Inoue,S., Higurashi,H., Watanabe,S., Yano,M., Ohki,S., … SPIE - The International Society for Optical Engineering
2 国際会議録 Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-μm DRAM technology Cui, Y., Zach, F.X., Butt, S., Li, W.-K., Liegl, B., Liebmann, L.W. SPIE-The International Society for Optical Engineering	8 国際会議録 Model Based Optical Proximity Correction For 0.12 UM Memory Process With ARF Lithography Cui, Yuping, Zach, Franz, Butt, Shahid, Samuels, Donald Electrochemical Society
3 国際会議録 Optical proximity correction considering mask manufacturability and its application to 0.25-ｦﾌm DRAM for enhanced device performance Park,C.-H., Rhie,S.-U., Choi,J.-H., Park,J.-S., Seo,H.-W., Kim,Y.-H., Park,Y.-K., Han,W.-S., Lee,W.-S., Kong,J.-T. SPIE - The International Society for Optical Engineering	9 国際会議録 Optical proximity correction of bit line pattern in DRAM devices Kim,Y.-B., Sohn,C.-J., Kang,H.-Y., Han,W.-S., Koh,Y.-B. SPIE-The International Society for Optical Engineering
4 国際会議録 Line-width variation with different sublayers for 0.25-ｦﾌm minimum feature size in DUV lithography Oh,H.-K., Cho,S.-Y., Jeong,Y.-U., Kang,H.-Y., Lee,G.-S., An,I., Park,I.-H. SPIE-The International Society for Optical Engineering	10 国際会議録 Aberration sensitivity control for the isolation layer in low-k1 DRAM process Cho, B.-H., Yim, D., Park, C.-H., Lee, S.-H., Yang, H.-J., Choi, J.-H., Shin, Y.-C., Kim, C.-D., Choi, J.-S., Kang, … SPIE-The International Society for Optical Engineering
5 国際会議録 Practical methodology of optical proximity correction in subquarter-micron lithography Lim,C.-M., Seo,J.-W., Kang,C.-S., Park,Y.-S., Yoon,J.-T., Lee,C.-S., Moon,S.-C., Kim,B.-H. SPIE - The International Society for Optical Engineering	11 国際会議録 The evaluation of assist feature defect printability for sub-0.13-μm technology Jeong, C.-Y., Kim, Y.K., Park, K.-Y., Choi, J.S., Lee, J.G. SPIE - The International Society of Optical Engineering
6 国際会議録 Assessments on process parameters' influences to the proximity correction Lee, E.-M., Lee, S.-W., Lee, D.-Y., Choi, S.-H., Park, J.-O., Jung, S.-G., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, … SPIE - The International Society of Optical Engineering	12 国際会議録 Application of full-chip level optical proximity correction to memory device with sub-0.10-μm design rule and ArF lithography Yune,H.-S., Kim,H.-B., Kim,W.-H., Ahn,C.-N., Ham,Y.-M., Shin,K.-S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12