Trench pattern lithography for 0.13- and 0.10-μm logic devices at 248- and 193-nm wavelengths

Trench pattern lithography for 0.13- and 0.10-μm logic devices at 248- and 193-nm wavelengths

著者名:

Wang,Y.-Y. ( Taiwan Semiconductor Manufacturing Co., Ltd. )

掲載資料名:

Optical Microlithography XIV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4346

発行年:

2001

巻:

4346

パート:

One of Two Parts

開始ページ:

276

終了ページ:

292

総ページ数:

17

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440327 [0819440329]

言語:

英語

請求記号:

P63600/4346

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012062
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	2001 : 14th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2001.02.27-2001.03.02

類似資料:

1 国際会議録 0.13-ｦﾌm optical lithography for random logic devices using 248-nm attenuated phase-shifting masks Chen,Y.T., Lin,C.H., Lin,H.T., Hsieh,H.C., Yu,S.S., Yen,A. SPIE - The International Society for Optical Engineering	7 国際会議録 Sub-0.10-μm lithography technology with resolution enhancement technique Chua, G.S., Lin, Q., Tay, C.J., Quan, C. SPIE-The International Society for Optical Engineering
2 国際会議録 Printing 0.13-μm contact holes using 193-nm attenuated phase-shifting masks Wang,C.-M.A., Lin,S.-J., Lin,C.-H., Ku,Y.-C., Yen,A. SPIE-The International Society for Optical Engineering	8 国際会議録 Mask error enhancement factor for sub-0.13-μm lithography Tan,S.K., Lin,Q., Quan,C., Tay,C.J., See,A. SPIE-The International Society for Optical Engineering
3 国際会議録 Model-based OPC for 0.13-μm contacts using 248-nm Att PSM Shin, J.-J., Wu, T.C., Chen, C.-K., Liu, R.-G., Ku, Y.C., Lin, B.J. SPIE-The International Society for Optical Engineering	9 国際会議録 Lithography challenges of dual-damascence process in 0.13-μm era Chen,L.-J., Shiu,L.-H., Tsai,C.-S., Chang,C.-H., Kang,T.-K., Chou,S.-Y. SPIE-The International Society for Optical Engineering
4 国際会議録 Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-μm VLSI manufacturing Wang,C.-M., Lai,C.-W., Huang,J., Liu,H.-Y. SPIE-The International Society for Optical Engineering	10 国際会議録 Application of full-chip level optical proximity correction to memory device with sub-0.10-μm design rule and ArF lithography Yune,H.-S., Kim,H.-B., Kim,W.-H., Ahn,C.-N., Ham,Y.-M., Shin,K.-S. SPIE-The International Society for Optical Engineering
5 国際会議録 MEF studies for attenuated phase-shift mask for sub-0.13-μm technology using 248 nm Tan, S.K., Lin, Q., Chua, G.S., Quan, C., Tay, C.J. SPIE-The International Society for Optical Engineering	11 国際会議録 Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography Ke, C.-M., Hung, H.-L., Chang, A., Chen, J.-H., Gau, T.-S., Ku, Y.-C., Lin, B.J., Otaka, T., Ueda, K., Kawada, H., … SPIE - The International Society of Optical Engineering
6 国際会議録 Application of scatterometry for CD and profile metrology in 193-nm lithography process development Chen, L.-J., Ke, C.-M., Yu, S.S., Gau, T.-S., Chen, P., Ku, Y.-C., Lin, B.J., Engelhard, D., Hetzer, D., Yang, J.Y., … SPIE-The International Society for Optical Engineering	12 国際会議録 Sub-0.18-ｦﾌm line/space lithography using 248-nm scanners and assisting feature OPC masks Lin,H.T., Lin,J.C.H., Chiu,C.S.G., Wang,Y.Y., Yen,A. SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12