Modification of development parameters of 193-nm chemically amplified resist with pattern density
- 著者名:
Seo,E.-J. ( Hanyang Univ. ) Sohn,Y.-S. Bak,H.-J. Oh,H.-K. Woo,S.-G. Seong,N. Cho,H.-K. - 掲載資料名:
- Advances in Resist Technology and Processing XVIII
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4345
- 発行年:
- 2001
- 巻:
- 4345
- パート:
- Two of Two Parts
- 開始ページ:
- 963
- 終了ページ:
- 972
- 総ページ数:
- 10
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819440310 [0819440310]
- 言語:
- 英語
- 請求記号:
- P63600/4345
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
9
国際会議録
Evaluation of puddle time effect and optimization of development process in 193-nm lithography
SPIE - The International Society of Optical Engineering |
4
国際会議録
Negative chemically amplified resist in making mask for a logic device with high pattern density
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |