Secondary-electron image profiles using bias voltage technique in deep contact hole

Secondary-electron image profiles using bias voltage technique in deep contact hole

著者名:

Ko,Y.-U. ( Univ. of Tennessee/Knoxville )
Joy,D.C.
Sullivan,N.T.
Mastovich,M.E.

掲載資料名:

Metrology, Inspection, and Process Control for Microlithography XV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4344

発行年:

2001

開始ページ:

37

終了ページ:

45

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440303 [0819440302]

言語:

英語

請求記号:

P63600/4344

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012060
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Metrology, inspection, and process control for microlithography
回次:	2001 : 15th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2001.02.26-2001.03.01

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