Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

著者名:

Shmidt,N.M. ( A.F. Ioffe Physico-Technical Institute )

掲載資料名:

16th International conference on photoelectronics and night vision devices : 25-27 May 2000 Moscow, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4340

発行年:

2000

開始ページ:

92

終了ページ:

96

総ページ数:

5

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440266 [0819440264]

言語:

英語

請求記号:

P63600/4340

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012056
シリーズID:	PA00000029
会議名:	International Conference on Photoelectronics and Night Vision Devices
回次:	2000 : 16th
会議開催地:	Moscow, Russia
会議開催年:	2000.05.25-2000.05.27

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