Role of localization effects in GaN and InGaN

Role of localization effects in GaN and InGaN

著者名:

Godlewski,M. ( Institute of Physics )
Goldys,E.M.

掲載資料名:

Smart optical inorganic structures and devices : 16-19 August 2000, Vilnius, Lithuania

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4318

発行年:

2000

開始ページ:

99

終了ページ:

108

総ページ数:

10

出版情報:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440006 [0819440000]

言語:

英語

請求記号:

P63600/4318

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012034
シリーズID:	PA00000029
会議名:	Smart Optical Inorganic Structures and Devices
回次:	2000
会議開催地:	Vilnius, Lithuania
会議開催年:	2000.08.16-2000.08.19

類似資料:

1 国際会議録 Photo- and Cathodoluminescence Investigations of Piezoelectric GaN/AlGaN Quantum Wells Goldys, E.M., Godlewski, M., Phillips, M. R., Toropov, A. A. Materials Research Society	7 国際会議録 Strong Piezoelectric Effects in Unstrained GaN Quantum Wells Langer, R., Simon, J., Konovalov, O., Pelekanos, N. T., Andre, R., Barski, A., Godlewski, M. MRS - Materials Research Society
2 国際会議録 Optical and Structural Studies of GaN Epilayers Godlewski,M. SPIE - The International Society for Optical Engineering	8 国際会議録 Well Thickness and Doping Effects, and Room-Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple-Quantum-Wells Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Tang, H., Salvador, A., Kim, W., Morkoc, H., Khan, M. Asif MRS - Materials Research Society
3 国際会議録 Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures IVANOV, V. YU., GODLEWSKI, M., TEISSEYRE, H., PERLIN, P., CZERNECKI, R., PRYSTAWKO, P., LESZCZYNSKI, M., GRZEGORY, I., … Kluwer Academic Publishers	9 国際会議録 The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes Thomson, J.D., Pope, I.A., Smowton, P.M., Blood, P., Lynch, R.J., Hill, G., Wang, T., Parbrook, P.J. SPIE - The International Society of Optical Engineering
4 国際会議録 Influence of Localisation Effects on Performance of Semiconductor-Based Light Emitting Devices Godlewski, M. SPIE-The International Society for Optical Engineering	10 国際会議録 Strain and Composition in InGaN/GaN Layers Pereira, S., Correia, M.R. Kluwer Academic Publishers
5 国際会議録 Effects of localization in CdTe-based quantum well structures Godlewski,M., Ivanov,V.Yu, Khachapuridze,A., Narkowicz,R., Phillips,M.R. SPIE-The International Society for Optical Engineering	11 国際会議録 Zirconium mediated hydrogen outdiffusion from p-GaN Kaminska, E., Piotrowska, A., Barcz, A., Jasinski, J., Zielinski, M., Golaszewska, K., Davis, R. F., Goldys, E., Tomsia, … MRS-Materials Research Society
6 国際会議録 On the origin of yellow donor-acceptor pair emission iu GaN Godlewski,M., Ivanov,V.Yu., Kaminska,A., Zuo,H.Y., Goldys,E.M., Tansley,T.L., Barski,A., Rossner,U., Rouvicre,J.L., … Trans Tech Publications	12 国際会議録 Optical Properties of Mu-Doped GaN Gelhausen, O., Malguth, E., Phillips, M.R, Goldys, E.M., Strassburg, M., Hoffmann, A., Graf, T., Gjukic, M., Stutzmann, … Materials Research Society

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