MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

著者名:

掲載資料名:

In-Plane Semiconductor Lasers V

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4287

発行年:

2001

開始ページ:

170

終了ページ:

175

総ページ数:

6

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439659 [0819439657]

言語:

英語

請求記号:

P63600/4287

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012003
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : In-plane semiconductor lasers
回次:	2001 : 5th
会議開催地:	San Jose, CA, USA
会議開催年:	2001.01.22-2001.01.23

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