GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser

GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser

著者名:

Akane,T. ( RIKEN-The Institute of Physical and Chemical Research )

掲載資料名:

Laser Applications in Microelectronic and Optoelectronic Manufacturing VI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4274

発行年:

2001

開始ページ:

133

終了ページ:

140

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439529 [0819439525]

言語:

英語

請求記号:

P63600/4274

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011990
シリーズID:	PA00000029
会議名:	SPIE LASE : Laser applications in microelectronic and optoelectronic manufacturing
回次:	2001 : 6th
会議開催地:	San Jose, CA, USA
会議開催年:	2001.01.22-2001.01.24

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