Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication

Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication

著者名:

Ong,S.Y.

掲載資料名:

Design, modeling, and simulation in microelectronics : 28-30 November 2000, Singapore

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4228

発行年:

2000

開始ページ:

270

終了ページ:

278

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439000 [0819439002]

言語:

英語

請求記号:

P63600/4228

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011946
シリーズID:	PA00000029
会議名:	Design, modeling, and simulation in microelectronics
回次:	2000
会議開催地:	Singapore
会議開催年:	2000.11.28-2000.11.30

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