Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

著者名:

Poyai,A.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4218

発行年:

2000

開始ページ:

403

終了ページ:

413

総ページ数:

11

出版情報:

Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

P63600/4218

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011937
シリーズID:	PA00000029
会議名:	Internationa Symposium on High Purity Silicon [ SPIE 0819438901 ] : Meeting of the Electrochemical Society
回次:	6th : 198th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2000.10.22-2000.10.27

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